Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2009-07-10

2010-10-19

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21633, C438S199000

Reexamination Certificate

active

07816201

ABSTRACT:
A semiconductor device according to an example of the present invention includes a first semiconductor region of a first conductivity type, a first MIS transistor of a second conductivity type formed in the first semiconductor region, a second semiconductor region of a second conductivity type, and a second MIS transistor of a first conductivity type formed in the second semiconductor region. A first gate insulating layer of the first MIS transistor is thicker than a second gate insulating layer of the second MIS transistor, and a profile of impurities of the first conductivity type in a channel region of the second MIS transistor has peaks.

REFERENCES:
patent: 6043128 (2000-03-01), Kamiya
patent: 6137144 (2000-10-01), Tsao et al.
patent: 6207510 (2001-03-01), Abein et al.
patent: 6267479 (2001-07-01), Yamada et al.
patent: 6403425 (2002-06-01), Ang et al.
patent: 6469347 (2002-10-01), Oda et al.
patent: 6740939 (2004-05-01), Sayama et al.
patent: 7087474 (2006-08-01), Mitsuda et al.
patent: 7402495 (2008-07-01), Kajimoto et al.
patent: 2005/0029616 (2005-02-01), Noda et al.
patent: 2007/0077719 (2007-04-01), Koyama et al.
patent: 2003-37250 (2003-03-01), None
patent: 10-2004-0054556 (2004-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4171439