Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-05-13

2008-05-13

Pham, Hoai V (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S393000

Reexamination Certificate

active

10897029

ABSTRACT:
A method of manufacturing a semiconductor device includes: forming a transistor with first and second ends of a main current path, and a control electrode, covering the transistor with a first insulating film, forming first through third openings that expose the first and second ends and the control electrode, and burying or filling first to third conductive materials in the first to third openings respectively, forming the ferroelectric capacitor by laminating the first electrode, the ferroelectric film, and the second electrode, laminating the second insulating film and the moisture diffusion protective film, forming the fourth opening to expose the third conductive material through the second insulating film and the moisture diffusion protective film, and forming a first wiring layer, which has electrical connection with the control electrode.

REFERENCES:
patent: 5786638 (1998-07-01), Yamaha
patent: 6781184 (2004-08-01), Solayappan et al.
patent: 07-050391 (1995-02-01), None
patent: 2003-100994 (2003-04-01), None

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