Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-09-05

2006-09-05

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S532000

Reexamination Certificate

active

07102186

ABSTRACT:
There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the insulating film, etching the second conductive film and the dielectric film into a first pattern shape by using a first mask, removing the first mask, and etching simultaneously the first conductive film and the second conductive film having the first pattern shape by using a second mask to form a plurality of capacitor upper electrodes made of the second conductive film and also form a plate line as a capacitor lower electrode, which is covered with the dielectric film having the first pattern shape and has a contact region, made of the first conductive film. Accordingly, a plurality of capacitors can be formed on the capacitor lower electrode with good precision.

REFERENCES:
patent: 5913150 (1999-06-01), Takaishi
patent: 6320214 (2001-11-01), Matsuda et al.
patent: 6335551 (2002-01-01), Takemura
patent: 6420744 (2002-07-01), Kim et al.
patent: 6570203 (2003-05-01), Hikosaka et al.
patent: 2001/0022372 (2001-09-01), Kanaya et al.
patent: 2003/0205738 (2003-11-01), Kanaya et al.
patent: 2004/0082175 (2004-04-01), Nakagawa
patent: 5-129156 (1993-05-01), None
patent: 2001-257320 (2001-09-01), None
patent: 2002-094021 (2002-03-01), None
Office Action from Japanese Patent Office dated May 23, 2006.

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