Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-03-11

2008-03-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S310000, C257S751000, C257SE21170, C257SE21006, C257SE21021, C257SE21304, C257SE21585

Reexamination Certificate

active

07341908

ABSTRACT:
Provided are a semiconductor device including a reliable interconnect and a method of manufacturing the same. The semiconductor device includes a substrate, an inter-metal dielectric (IMD) pattern having an opening, an amorphous metallic nitride layer formed on the inner surface of the opening, a diffusion barrier layer formed on the amorphous metallic nitride layer, and a conductive layer filled into the opening having the diffusion barrier layer.

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