Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-12
2011-07-12
Parker, Ken A (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S208000, C438S218000, C438S219000, C438S285000, C438S353000, C438S356000, C438S400000
Reexamination Certificate
active
07977198
ABSTRACT:
A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.
REFERENCES:
patent: 5068705 (1991-11-01), Tran
patent: 5072274 (1991-12-01), Kokado
patent: 5243206 (1993-09-01), Zhu et al.
patent: 5243207 (1993-09-01), Plumton et al.
patent: 5378920 (1995-01-01), Nakagawa et al.
patent: 5852327 (1998-12-01), Komori et al.
patent: 5869856 (1999-02-01), Kasahara
patent: 5914758 (1999-06-01), Kishida et al.
patent: 5929437 (1999-07-01), Elliott et al.
patent: 6166404 (2000-12-01), Imoto et al.
patent: 6476431 (2002-11-01), Ohno et al.
patent: 2004/0104404 (2004-06-01), Bito
patent: 2001-110817 (2001-04-01), None
Suemitsu et al., Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTs, Electronic Letters, Jun. 6, 1996, vol. 32, No. 12, pp. 1143-1144.
Suemitsu et al., Body Contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression, Electronic Letters, Apr. 27, 1995, vol. 31, No. 9, pp. 758-759.
Sleiman et al., Breakdown Quenching in High Electron Mobility Transistor by Using Body Contact, IEEE Transactions on Electron Devices, vol. 48, No. 10, Oct. 10, 2001, pp. 2188-2191.
Sze, S.M. Physics of Semiconductor Devices: Second Edition, John Wiley & Sons, 1981, p. 306.
Nakamura Mitsuhiro
Nishida Tomoya
Onodera Koji
Ho Anthony
K&L Gates LLP
Parker Ken A
Sony Corporation
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