Semiconductor device and method of manufacturing...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S208000, C438S218000, C438S219000, C438S285000, C438S353000, C438S356000, C438S400000

Reexamination Certificate

active

07977198

ABSTRACT:
A semiconductor device is provided. The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate. The device separation region is composed of a layer in which a conductive impurity is introduced, and an electrode to which a positive voltage is to be applied is formed on the device separation region, specifically on the surface of at least a part of the device separation region in the periphery of the field effect transistor.

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