Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2009-12-18
2011-12-20
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S620000, C257S621000, C257SE23179
Reexamination Certificate
active
08080882
ABSTRACT:
A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.
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Chua Linda Pei Ee
Do Byung Tai
Kuan Heap Hoe
Pagaila Reza A.
Atkins Robert D.
Patent Law Group
Potter Roy K
STATS ChipPAC Ltd.
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