Semiconductor device and method of forming oxide layer on...

Details Semiconductor device and method of forming oxide layer on... Semiconductor device and method of forming oxide layer on...

2008-03-19

2010-12-14

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S779000, C257SE23020, C257SE23021, C257SE21508

Reexamination Certificate

active

07851345

ABSTRACT:
A semiconductor device has a semiconductor die with a solder bump formed on its surface. A contact pad is formed on a substrate. A signal trace is formed on the substrate. The pitch between the contact pad and signal trace is less than 150 micrometers. An electroless surface treatment is formed over the contact pad. The electroless surface treatment can include tin, ENIG, or OSP. A film layer is formed over the contact pad with an opening over the signal trace. An oxide layer is formed over the signal trace. The film layer and surface treatment prevent formation of the oxide layer over the contact pad. The film layer is removed. The solder bump is reflowed to metallurgically and electrically bond to the contact pad. In the event that the solder bump physically contacts the oxide layer, the oxide layer maintains electrical isolation between the solder bump and signal trace.

REFERENCES:
patent: 5650595 (1997-07-01), Bentlage et al.
patent: 6431432 (2002-08-01), McCormick et al.
patent: 6622380 (2003-09-01), Grigg
patent: 6809262 (2004-10-01), Hsu
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patent: 2002/0011666 (2002-01-01), Tandy
patent: 2004/0099961 (2004-05-01), Chu et al.
patent: 2005/0277226 (2005-12-01), Degani et al.

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