Semiconductor device and method of forming an interconnect...

Details Semiconductor device and method of forming an interconnect... Semiconductor device and method of forming an interconnect...

2009-06-08

2011-11-29

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C438S127000, C438S680000, C257SE21006, C257SE21051, C257SE21170, C257SE21352, C257SE21502, C257SE21499, C257SE21508

Reexamination Certificate

active

08067308

ABSTRACT:
A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the substrate. A semiconductor die or component is mounted to the first interconnect structure. An encapsulant is deposited over the first interconnect structure and semiconductor die or component. A portion of a second side of the substrate is removed to reduce its thickness and expose the TSV. A second interconnect structure is formed over the second side of the substrate. The encapsulant provides structural support while removing the portion of the second side of the substrate. The second interconnect structure is electrically connected to the conductive via. The second interconnect structure can include a redistribution layer to extend the conductivity of the conductive via. The semiconductor device is mounted to a printed circuit board through the second interconnect structure.

REFERENCES:
patent: 6002169 (1999-12-01), Chia et al.
patent: 7741148 (2010-06-01), Marimuthu et al.
patent: 2010/0140736 (2010-06-01), Lin et al.
patent: 2010/0140751 (2010-06-01), Tay et al.
patent: 2010/0140815 (2010-06-01), Marimuthu et al.

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