Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-10-27
2011-12-13
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S675000
Reexamination Certificate
active
08076234
ABSTRACT:
For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.
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Bang Suk-Chul
Choi Gil-Heyun
Jung Deok-Young
Lim Dong-Chan
Moon Kwang-Jin
Brewster William M.
Choi Monica H.
Samsung Electronics Co,. Ltd.
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