Semiconductor device and method of fabricating the same...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000, C438S675000

Reexamination Certificate

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08076234

ABSTRACT:
For forming a semiconductor device, a via structure is formed through at least one dielectric layer and at least a portion of a substrate. In addition, a protective buffer layer is formed onto the via structure. Furthermore, a conductive structure for an integrated circuit is formed over the substrate after forming the via structure and the protective buffer layer, with the conductive structure not being formed over the via structure. Thus, deterioration of the conductive and via structures is minimized.

REFERENCES:
patent: 6707157 (2004-03-01), Hoshino
patent: 2007/0275514 (2007-11-01), Itou
patent: 2008/0006931 (2008-01-01), Oliver et al.
patent: 2008/0160757 (2008-07-01), Han et al.
patent: 2009/0014888 (2009-01-01), Lee et al.
patent: 2009/0045487 (2009-02-01), Jung
patent: 2009/0160051 (2009-06-01), Lee
patent: 2009/0191708 (2009-07-01), Kropewnicki et al.
patent: 2009/0278230 (2009-11-01), Komuro
patent: 2009/0321796 (2009-12-01), Inohara
patent: 2010/0187671 (2010-07-01), Lin et al.
Japanese Publication No. 2009-277719 to Masahiro, having Publication date of Nov. 26, 2009 (w/ English Abstract page).
Japanese Publication No. 2010-067916 to Atsushi, having Publication date of Mar. 25, 2010 (w/ English Abstract page).

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