Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1998-12-01

2000-12-12

Zarabian, Amir

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438254, H10L 218234

Patent

active

061597856

ABSTRACT:
An amorphous silicon film is formed on an interlayer insulating film to cover an upper surface of the interlayer insulating film, and a side surface and a bottom surface of an opening formed at the interlayer insulating film. Phosphorus ions are implanted into the amorphous silicon film. The phosphorous ions are implanted into the amorphous silicon film located on the upper surface of the interlayer insulating film to prevent crystal grains from growing, and thus a polysilicon film having no hemispherical grains is formed. Accordingly, a semiconductor device having capacitors with respective storage nodes adjacent to each other that are electrically isolated properly is obtained.

REFERENCES:
patent: 5760434 (1998-06-01), Zahurak et al.
patent: 5792693 (1998-08-01), Tseng
patent: 5817555 (1998-10-01), Cho
patent: 5932906 (1999-08-01), Shimizu
"Growth Mechanism of Polycrystalline Si Films with Hemispherical Grains", Toru Tatsumi, et al., Oyo Butsuri, vol., 61, No. 11, 1992.

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