Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1999-06-14

2000-12-12

Tran, Andrew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438236, H01L 218249

Patent

active

061597848

ABSTRACT:
A method of producing a semiconductor device by which the resistivities of the base, collector, and source/drain regions in a Bi-CMOS are decreased and the production step is simplified. A method of producing a semiconductor device comprising the steps of forming a gate electrode (the first semiconductor layer) on a substrate; forming an insulating film; forming a second semiconductor layer; leaving the second semiconductor layer and the insulating film on the bipolar part and removing them on the CMOS part to form sidewalls on the side faces of the gate electrode; forming source/drain regions; forming a Ti layer over the entire surface and forming silicide on the surfaces of the second semiconductor layer, the source/drain regions, and the gate electrode; and forming a base electrode by patterning the second semiconductor layer.

REFERENCES:
patent: 5081515 (1992-01-01), Murata et al.
patent: 5525530 (1996-06-01), Watabe

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