Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2010-04-16

2011-12-20

Ghyka, Alexander G. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21410

Reexamination Certificate

active

08080458

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming a first columnar semiconductor layer on a substrate forming a first flat semiconductor layer forming a first semiconductor layer of a second conductive type, and forming a first insulating film. The method further includes the steps of forming a gate insulating film and a gate electrode, forming a second semiconductor layer of the second conductive type, forming a semiconductor layer of a first conductive type and forming a metal-semiconductor compound. The first insulating film has a thickness larger than that of the gate insulating film formed around the first columnar silicon layer.

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Extended European Search Report for European Application No. 10003947.8, dated Nov. 17, 2010, 9 pages.

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