Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2005-07-27

2008-07-08

Le, Thao X. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S219000, C257S375000

Reexamination Certificate

active

07396715

ABSTRACT:
Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.

REFERENCES:
patent: 5254489 (1993-10-01), Nakata
patent: 6184083 (2001-02-01), Tsunashima et al.
patent: 6538278 (2003-03-01), Chau
patent: 6597046 (2003-07-01), Chau et al.
patent: 2000-188338 (2000-07-01), None
Patent Abstracts of Japan, Publication No. 2000188338, filed on Jul. 4, 2000.
Patent Abstracts of Japan, Publication No. 2003023100, filed Jan. 24, 2003.

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