Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-07
2009-10-20
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S391000
Reexamination Certificate
active
07605041
ABSTRACT:
Multiple kinds of transistors exhibiting desired characteristics are manufactured in fewer processes. A semiconductor device includes an isolation region reaching a first depth, first and second wells of first conductivity type, a first transistor formed in the first well and having a gate insulating film of a first thickness, and a second transistor formed in the second well and having a gate insulating film of a second thickness less than the first thickness. The first well has a first impurity concentration distribution having an extremum maximum value only at the depth equal to or greater than the first depth. The second well has a second impurity concentration distribution which is superposition of the first impurity concentration distribution, and another impurity concentration distribution which shows an extremum maximum value at a second depth less than the first depth, the superposition shows also an extremum maximum value at the second depth.
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Anezaki Toru
Ema Taiji
Kojima Hideyuki
Fujitsu Microelectronics Limited
Le Thao X
Trice Kimberly
Westerman Hattori Daniels & Adrian LLP
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