Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2011-06-07

2011-06-07

Parker, Ken A (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S246000, C438S561000, C257SE21654

Reexamination Certificate

active

07955927

ABSTRACT:
A semiconductor device includes a semiconductor substrate. The semiconductor substrate has a memory array region and a peripheral circuit region; a first active region and a second active region in the peripheral circuit region; a recessed gate disposed on the memory array region, comprising a first gate dielectric layer on the semiconductor substrate, wherein the first gate dielectric layer has a first thickness; and a second gate dielectric layer on the peripheral circuit region, wherein the second gate dielectric layer on the first active layer has a second thickness, and the second gate dielectric layer on the second active layer has a third thickness.

REFERENCES:
patent: 6297103 (2001-10-01), Ahn et al.
patent: 6317360 (2001-11-01), Kanamori
patent: 6700154 (2004-03-01), Vidmantas et al.
patent: 6794708 (2004-09-01), Mori
patent: 7429509 (2008-09-01), Lee
patent: 472359 (2002-01-01), None
patent: 1278071 (2007-04-01), None

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