Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-09
2005-08-09
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
06927113
ABSTRACT:
A semiconductor component and a method for manufacturing the semiconductor component that mitigates electromigration and stress migration in a metallization system of the semiconductor component. A hardmask is formed over a dielectric layer and an opening is etched through the hardmask and into the dielectric layer. The opening is lined with a barrier layer and filled with an electrically conductive material. The electrically conductive material is planarized, where the planarization process stops on the barrier layer. Following planarization, the electrically conductive material is recessed using either an over-polishing process with highly selective copper slurry or a wet etching process to partially re-open the filled metal-filled trench or via. The recess process is performed such that the exposed portion of the electrically conductive material is below the dielectric layer. A capping layer is then deposited on both the dielectric portion and the exposed metal interconnect portion of the electrically conductive material.
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Huang Richard J.
Martin Jeremy
Sahota Kashmir S.
Xie James J.
Advanced Micro Devices
Dover Rennie William
Drake Paul
Harrison Monica D.
Thompson Craig A.
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