Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Patent
1996-12-20
1999-04-27
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
257781, 257784, 257751, 257737, H01L 21316, H01L 2160, H01L 21321
Patent
active
058982264
ABSTRACT:
A semiconductor chip is provided comprising a semiconductor substrate having determined circuit elements on it, a surface-smoothing layer deposited on the substrate, a bonding pad formed on the smoothing layer and connected electrically to the circuit elements, a passivation layer formed on the surface-smoothing layer, the passivation layer having a window for exposing a part of the bonding pad, and a second metal layer having a same height as the passivation layer and occupying peripheral parts of the window to form a reduced bonding windows for the bonding pad.
REFERENCES:
patent: 4733289 (1988-03-01), Tsurumaru
patent: 5430329 (1995-07-01), Harada et al.
patent: 5665996 (1997-09-01), Williams et al.
Jeong Ki-Kwon
Kim Hyeong-Seob
Brown Peter Toby
Duong Hung Van
Samsung Electronics Co,. Ltd.
LandOfFree
Semiconductor chip having a bonding window smaller than a wire b does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor chip having a bonding window smaller than a wire b, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor chip having a bonding window smaller than a wire b will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-687125