Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2008-06-10
2008-06-10
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257SE23002
Reexamination Certificate
active
07385277
ABSTRACT:
A semiconductor chip may include a semiconductor substrate that may have a semiconductor device pattern. A passivation layer may be provided on a surface of the semiconductor substrate. At least one elastic protecting layer may be provided on the passivation layer. The elastic protecting layer may have a pattern composed of grooves formed on a surface.
REFERENCES:
patent: 4904610 (1990-02-01), Shyr
patent: 6335561 (2002-01-01), Imoto
patent: 6429042 (2002-08-01), Guida
patent: 6576990 (2003-06-01), Flesher et al.
patent: 6897164 (2005-05-01), Baude et al.
patent: 7129565 (2006-10-01), Watanabe et al.
patent: 7170152 (2007-01-01), Huang et al.
patent: 7198969 (2007-04-01), Khandros et al.
patent: 2006/0076649 (2006-04-01), Letertre et al.
patent: 10-2001-0001597 (2001-01-01), None
patent: 10-2005-0047873 (2005-05-01), None
On the Mechanism of Thymine Photodimerization□□by A. A. Lamola and J. Eisinger□□Bell Telephone Laboratories, Murray Hill, New Jersey□□Communicated by W. O. Baker, Oct. 30, 1967.
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Zarneke David A
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