Lithographic apparatus and device manufacturing method

Photocopying – Projection printing and copying cameras – Step and repeat

Reexamination Certificate

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C355S067000, C355S077000

Reexamination Certificate

active

07372540

ABSTRACT:
By proper selection of illumination configuration, mask transmission, and mask bias, complex patterns of contact holes may be imaged with sufficient latitude for manufacturing at minimum half-pitches of k1=0.40 or below. In an embodiment, a method of transferring an image of a mask pattern onto a substrate with a lithographic apparatus is presented. The method includes illuminating a mask pattern of an attenuated phase shift mask with an illumination configuration including on-axis and off-axis components, the off-axis component of the illumination being an annular illumination extending near a pupil edge, and projecting an image of the illuminated mask pattern onto the substrate.

REFERENCES:
patent: 5253040 (1993-10-01), Kamon et al.
patent: 5627626 (1997-05-01), Inoue et al.
patent: 6358856 (2002-03-01), Lyons et al.
patent: 6452662 (2002-09-01), Mulkens et al.
patent: 6664011 (2003-12-01), Lin et al.
patent: 6671035 (2003-12-01), Eurlings et al.
patent: 2001/0001247 (2001-05-01), Finders et al.
patent: 2002/0152452 (2002-10-01), Socha
patent: 2002/0177054 (2002-11-01), Saitoh et al.
patent: 2003/0073013 (2003-04-01), Hsu et al.
patent: 2004/0137343 (2004-07-01), Eurlings et al.
patent: 2004/0156029 (2004-08-01), Hansen
patent: 2004/0158808 (2004-08-01), Hansen
patent: 2004/0169838 (2004-09-01), Lee
patent: 2004/0229133 (2004-11-01), Socha et al.
patent: 2005/0142470 (2005-06-01), Socha et al.
patent: 2006/0146307 (2006-07-01), Hansen et al.
patent: 2006/0256311 (2006-11-01), Hansen et al.
Wim Bogaerts et al., “Tolerance Control for Photonic Crystal Structures Fabricated With Deep UV Lithography,” Ghent University- IMEC Dept. of Information Technology (Belgium), p. Two Pages.
Vincent Wiaux et al., “ArF solutions for low-k1 back-end imaging,” Optical Microlithography XVI, Proceedings of SPIE, p. 270-281, (2003).
Will Conley et al., “Mighty High-T Lithography for 65 nm Generation Contacts,” Optical Microlithography XVI, Proceedings of SPIE, p. 1210-1219, (2003).
Carsten Kohler et al., “Optical Solutions for Contact Hole Lithography at the 90nm Node and Beyond,” p. 10 Pages.
Mark D. Levenson et al., “The Vortex Mask: Making 80nm Contacts With a Twist,” 22nd Annual Bacus Symposium on Photomask Technology, Proceeding of SPIE, vol. 4889 (2002).
European Search Report issued for European Application Patent No. 05256021.6, dated Nov. 30, 2005.

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