Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-01-02
2007-01-02
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S758000, C257S773000, C257S786000
Reexamination Certificate
active
10908839
ABSTRACT:
Described is a semiconductor device having improved semiconductor bond pad reliability and methods of manufacturing thereof. The semiconductor device includes a layer formed over an integrated circuit on a semiconductor substrate. The first layer includes a conductive portion and an insulating portion. A second layer is then formed over the first layer and includes a conductive portion corresponding to the first layer's conductive portion and an insulating portion corresponding to the first layer's insulating portion. A bond pad is then formed over the first and second layers such that the bond pad is substantially situated above the conductive portions and the insulating portions of the first and second layers. A bonding ball is then formed on the bond pad substantially above the conduction portion of the first and second layers.
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Hou Shang-Yu
Hsu Chia-Hsiung
Huang Chender
Su Chao-Yuan
Tsao Pei-Haw
Baker & McKenzie LLP
Chambliss Alonzo
Taiwan Semiconductor Manufacturing Company , Ltd.
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