Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-29
2010-11-09
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21418
Reexamination Certificate
active
07829417
ABSTRACT:
A semiconductor apparatus with a superjunction structure includes a gate electrode which fills a trench that is formed in an epitaxial layer, and a column region which is surrounded by the gate electrode in a plane view. A photomask for forming the column region is elaborated. The photomask has a compensation pattern that compensates a deformation of a photo resist pattern caused by photo interference and a deformation of the ion implantation region diffused by heat treatment. Therefore extending direction of the gate electrode and the outer edge of the column region are substantially parallel.
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Kawashima Yoshiya
Miura Yoshinao
Ninomiya Hitoshi
Monbleau Davienne
NEC Electronics Corporation
Reames Matthew
Young & Thompson
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