Semiconductor apparatus and method of manufacturing...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21418

Reexamination Certificate

active

07829417

ABSTRACT:
A semiconductor apparatus with a superjunction structure includes a gate electrode which fills a trench that is formed in an epitaxial layer, and a column region which is surrounded by the gate electrode in a plane view. A photomask for forming the column region is elaborated. The photomask has a compensation pattern that compensates a deformation of a photo resist pattern caused by photo interference and a deformation of the ion implantation region diffused by heat treatment. Therefore extending direction of the gate electrode and the outer edge of the column region are substantially parallel.

REFERENCES:
patent: 4382827 (1983-05-01), Romano-Moran et al.
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5361110 (1994-11-01), Haraguchi
patent: 5631110 (1997-05-01), Shioiri et al.
patent: 5994758 (1999-11-01), Hayashi
patent: 6653026 (2003-11-01), Pierrat et al.
patent: 2003/0030051 (2003-02-01), Zhou
patent: 2006-93430 (2006-04-01), None
patent: 2006-165441 (2006-06-01), None

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