Semiconductor apparatus and method for fabricating the same

Details Semiconductor apparatus and method for fabricating the same Semiconductor apparatus and method for fabricating the same

2008-06-05

2010-11-09

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C257S330000, C257SE21384, C257SE21419, C257SE21428

Reexamination Certificate

active

07829418

ABSTRACT:
A semiconductor apparatus including a trench gate transistor having at least an active region surrounded by a device isolation insulating film; a trench provided by bringing both ends thereof into contact with the device isolation insulating film in the active region; a gate electrode formed in the trench via a gate insulating film; and a diffusion layer formed close to the trench; on a semiconductor substrate, and also includes an opening portion positioned on one surface of the semiconductor substrate; a pair of first inner walls positioned in a side of the device isolation insulating film and connected with the opening portion; a pair of second inner walls positioned in a side of the active region and connected with the opening portion; and a bottom portion positioned opposite to the opening portion and connected with the first inner walls and the second inner walls, wherein a cross sectional outline of the second inner wall is substantially linear, and a burr generated inside the trench is removed or reduced.

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Chinese Office Action dated Dec. 4, 2009 and English translation thereof.

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