Semiconductor acceleration sensor with source and drain regions

Details Semiconductor acceleration sensor with source and drain regions Semiconductor acceleration sensor with source and drain regions

1995-03-13

1997-05-06

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257418, 257420, 7351421, 7351422, 7351423, 7351436, 7351437, 7351416, 73DIG1, H01L 2982

Patent

active

056273975

ABSTRACT:
A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.

REFERENCES:
patent: 5016072 (1991-05-01), Greiff
patent: 5103279 (1992-04-01), Guheridge
patent: 5126812 (1992-06-01), Greiff
Dunn, et al: "Automotive Silicon Sensor Integration", SAE Technical Paper Series, 920471, pp. 1-6, Feb. 1992.
Payne, et al: "Surface Micromachined Accelerometer: A Technology Update", SAE, 910496, Feb. 25, 1991, pp. 127-135.
Nathanson, et al: "The Resonant Gate Transistor", IEEE Transactions on Electron Devices, vol. ED-14, No. 3, Mar. 1967 pp. 117-133.
Nathanson, et al: "A Resonant-Gate Silicon Surface Transistor with High-Q Band-Pass Properties", Applied Physics Letters, vol. 7, No. 4, Aug. 15, 1965-pp. 84-86.

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