Self-limited metal recess for deep trench metal fill

Details Self-limited metal recess for deep trench metal fill Self-limited metal recess for deep trench metal fill

2005-10-11

2005-10-11

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S387000

Reexamination Certificate

active

06953724

ABSTRACT:
Disclosed is a method of manufacturing a deep trench capacitor structure that forms a trench in a substrate, lines the trench with a polysilicon liner, and forms titanium nitride columns along the polysilicon liner. The method etches the titanium nitride columns using chlorine-based dry chemistry that is substantially isotropic. This etching process removes the upper portion of the titanium nitride columns without affecting the polysilicon liner. The etching process attacks only in the uppermost portion of the titanium nitride columns such that, after the etching process is completed, the remaining lower portions of the titanium nitride columns are substantially unaffected by the etching process. Then, the method fills the space between the titanium nitride columns and the upper portion of the trench with additional polysilicon material. The process of filling the space simultaneously forms a polysilicon plug and polysilicon cap.

REFERENCES:
patent: 4804636 (1989-02-01), Groover, III et al.
patent: 4957590 (1990-09-01), Douglas
patent: 4975756 (1990-12-01), Haken et al.
patent: 5035768 (1991-07-01), Mu et al.
patent: 5283453 (1994-02-01), Rajeevakumar
patent: 5521114 (1996-05-01), Rajeevakumar
patent: 5754390 (1998-05-01), Sandhu et al.
patent: 5948702 (1999-09-01), Rotondaro
patent: 6153490 (2000-11-01), Xing et al.
patent: 6218255 (2001-04-01), Fritzinger et al.
patent: 6255226 (2001-07-01), Zheng et al.
patent: 6444542 (2002-09-01), Moise et al.
patent: 6452224 (2002-09-01), Mandelman et al.
patent: 6693007 (2004-02-01), Chen et al.
patent: 6750495 (2004-06-01), Alers et al.
patent: 2002/0009891 (2002-01-01), Ting et al.
patent: 2002/0079522 (2002-06-01), Diodato et al.
patent: 2003/0073282 (2003-04-01), Ning
patent: 2001-15494 (2001-01-01), None

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