Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-10-21
2011-12-27
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S128000, C438S412000, C438S703000, C257SE21214, C257SE21532, C257SE21536
Reexamination Certificate
active
08084310
ABSTRACT:
Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.
REFERENCES:
patent: 2008/0315746 (2008-12-01), Gosain et al.
Bencher Christopher Dennis
Mebarki Bencherki
Miao Li Yan
Shu Jen
Applied Materials Inc.
Kilpatrick Townsend & Stockton LLP
Lee Cheung
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