Self aligned double patterning flow with non-sacrificial...

Details Self aligned double patterning flow with non-sacrificial... Self aligned double patterning flow with non-sacrificial...

2011-07-05

2011-07-05

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21295

Reexamination Certificate

active

07972959

ABSTRACT:
Embodiments of the present invention pertain to methods of forming features on a substrate using a self-aligned double patterning (SADP) process. A conformal layer of non-sacrificial material is formed over features of sacrificial structural material patterned near the optical resolution of a photolithography system using a high-resolution photomask. An anisotropic etch of the non-sacrificial layer leaves non-sacrificial ribs above a substrate. A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features. No hard mask is needed to form the non-sacrificial ribs, reducing the number of processing steps involved.

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