Self-aligned double gate mosfet with separate gates

Details Self-aligned double gate mosfet with separate gates Self-aligned double gate mosfet with separate gates

2006-09-05

2006-09-05

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S331000

Reexamination Certificate

active

07101762

ABSTRACT:
A structure and method of manufacturing a double-gate integrated circuit which includes forming a laminated structure having a channel layer and first insulating layers on each side of the channel layer, forming openings in the laminated structure, forming drain and source regions in the openings, removing portions of the laminated structure to leave a first portion of the channel layer exposed, forming a first gate dielectric layer on the channel layer, forming a first gate electrode on the first gate dielectric layer, removing portions of the laminated structure to leave a second portion of the channel layer exposed, forming a second gate dielectric layer on the channel layer, forming a second gate electrode on the second gate dielectric layer, doping the drain and source regions, using self-aligned ion implantation, wherein the first gate electrode and the second gate electrode are formed independent of each other.

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