Self-aligned contacts for semiconductor device

Details Self-aligned contacts for semiconductor device Self-aligned contacts for semiconductor device

1998-03-30

2000-10-17

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, 438719, 438723, 438724, 438729, 438735, H01L 213065

Patent

active

061331538

ABSTRACT:
A plasma, formed from a mixture of C.sub.4 F.sub.8 and CH.sub.2 F.sub.2, is used to etch a self-aligned contact, the self-aligned contact being an opening in the oxide layer, the opening being aligned with an opening in an underlying nitride layer and extending to a substrate underlying the nitride. The mixture of C.sub.4 F.sub.8 and CH.sub.2 F.sub.2 provides a high ratio of oxide etch rate to nitride etch rate so that the etching is completed without substantially damaging the nitride layer. For thicker oxide layers a preliminary etch step using C.sub.2 F.sub.6 and C.sub.2 HF.sub.5 may be performed prior to using the mixture of C.sub.4 F.sub.8 and CH.sub.2 F.sub.2.

REFERENCES:
patent: 4412902 (1983-11-01), Michikami et al.
patent: 4980304 (1990-12-01), Chin et al.
patent: 4987099 (1991-01-01), Flanner et al.
patent: 5286667 (1994-02-01), Lin et al.
patent: 5366590 (1994-11-01), Kadomura
patent: 5374332 (1994-12-01), Koyama et al.
patent: 5503901 (1996-04-01), Sakai et al.
patent: 5520771 (1996-05-01), Kanai et al.
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5637237 (1997-06-01), Oehrlein et al.
patent: 5662819 (1997-09-01), Kadomura
patent: 5783496 (1998-07-01), Flanner et al.
Allen "Effect of flourine concentration on the etch characteristics of fluorinated tetraethylorthosilicate films", Mar./Apr. 1996, J. Vac. Sci. Technol. B 14(2), pp. 724-726.
Itjima et al. "Highly Selective SiO.sub.2 Etch Employing Inductively Coupled Hydro-Fluorocarbon Plasma Chemistry for Self Aligned Contact Etch", (1997) Jpn. J. Appl. Phys. vol. 36, Pt. 1, No. 9A, pp. 5498-5501.
International Search Report.

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