Self aligned contacts

Details Self aligned contacts Self aligned contacts

1997-08-21

2000-01-04

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438233, 438586, H01L 21283

Patent

active

060109351

ABSTRACT:
A process of forming a self aligned contact on a surface of a wafer having one or more gate structures and a contact region adjacent the gate structures. The gate structures are isolated from the contact region by one or more spacers having predetermined thicknesses. The process comprises the steps of depositing a conformal etch stop layer over the gate structures and contact region, depositing a sacrificial layer over the etch stop layer, selectively removing a portion of the sacrificial layer to expose a portion of the etch stop layer adjacent the contact region and removing the etch stop layer to expose contact region. The etch stop layer protects spacers from damage resulting from selective etch of the sacrificial layer. In one preferred embodiment, the etch stop layer has a substantially uniform thickness and may be removed by a timed etch.

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