Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-27
2008-05-27
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S422000, C257SE21632
Reexamination Certificate
active
07378306
ABSTRACT:
A semiconductor process and apparatus provide a planarized hybrid substrate (225) having a more uniform polish surface (300) by thickening an SOI semiconductor layer (210) in relation to a previously or subsequently formed epitaxial silicon layer (220) with a selective silicon deposition process that covers the SOI semiconductor layer (210) with a crystalline semiconductor layer (216). By forming first gate electrodes (151) over a first SOI substrate (90) using deposited (100) silicon and forming second gate electrodes (161) over an epitaxially grown (110) silicon substrate (70), a high performance CMOS device is obtained which includes high-k metal PMOS gate electrodes (161) having improved hole mobility.
REFERENCES:
patent: 5627395 (1997-05-01), Witek et al.
patent: 5705409 (1998-01-01), Witek
patent: 6214653 (2001-04-01), Chen et al.
patent: 6245161 (2001-06-01), Henley et al.
patent: 6558802 (2003-05-01), Henley et al.
patent: 6649494 (2003-11-01), Tamura et al.
patent: 6815278 (2004-11-01), Ieong et al.
patent: 6825534 (2004-11-01), Chen et al.
patent: 6992003 (2006-01-01), Spencer et al.
patent: 2002/0175370 (2002-11-01), Bockelman
patent: 2003/0017622 (2003-01-01), Mastroianna
Beckage Peter J.
Dhandapani Veer
Sadaka Mariam G.
Spencer Gregory S.
Cannatti Michael Rocco
Freescale Semiconductor Inc.
Hamilton & Terrile LLP
Kebede Brook
LandOfFree
Selective silicon deposition for planarized dual surface... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective silicon deposition for planarized dual surface..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective silicon deposition for planarized dual surface... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2748100