Selective removal of etching residues

Details Selective removal of etching residues Selective removal of etching residues

1997-11-13

2000-11-21

Cain, Edward J.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

134 2, 134 3, 438906, H01L 21302

Patent

active

061502820

ABSTRACT:
Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.

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