Selective partial curing of spin-on-glass by ultraviolet radiati

Details Selective partial curing of spin-on-glass by ultraviolet radiati Selective partial curing of spin-on-glass by ultraviolet radiati

1996-06-07

1999-02-02

Chang, Ceila

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438756, H01L 2100

Patent

active

058664815

ABSTRACT:
This invention relates to a method for protecting regions of a spin-on-glass(SOG) layer, which covers usable semiconductor dice, from dissolution damage during an etch step which removes SOG along the wafer edge. The endangered dice have portions which lie in the area affected by the edge rinse. Instead of performing the edge etching step immediately after the deposition of the SOG, the endangered dice are first selectively partially cured by exposure to ultraviolet radiation. This makes the SOG over these dice resistant to the SOG solvent used for the edge rinse. Up to ten percent of the total usable dice on the wafer can be salvaged by the method of this invention.

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