Selective metal encapsulation schemes

Details Selective metal encapsulation schemes Selective metal encapsulation schemes

2007-04-17

2007-04-17

Malasawma, Lex H. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S670000, C438S678000

Reexamination Certificate

active

10812480

ABSTRACT:
A method and system of processing a semiconductor substrate includes, in one or more embodiments, depositing a protective layer on the substrate surface comprising a conductive element disposed in a dielectric material; processing the protective layer to expose the conductive element; electrolessly depositing a metallic passivating layer onto the conductive element; and removing at least a portion of the protective layer from the substrate after electroless deposition. In another aspect, a method and system of processing a semiconductor includes depositing a metallic passivating layer onto a substrate surface comprising a conductive element, masking the passivating layer to protect the underlying conductive element of the substrate surface, removing the unmasked passivating layer, and removing the mask from the passivating layer.

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