Selective fluorocarbon-based RIE process utilizing a nitrogen ad

Details Selective fluorocarbon-based RIE process utilizing a nitrogen ad Selective fluorocarbon-based RIE process utilizing a nitrogen ad

1992-01-02

1994-02-08

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156665, 156654, 156657, 437195, 437228, H01L 2100

Patent

active

052845494

ABSTRACT:
A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.

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patent: 4904341 (1990-02-01), Blaugher et al.
patent: 4956043 (1990-09-01), Kanetomo et al.

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