Selective etching of oxides from substrates

Details Selective etching of oxides from substrates Selective etching of oxides from substrates

2006-03-08

2008-10-07

Tran, Binh X (Department: 1792)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S058000, C216S073000, C216S079000, C134S003000, C134S031000, C438S706000, C438S739000, C438S745000, C438S756000

Reexamination Certificate

active

07431853

ABSTRACT:
A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a process chamber at a pressure and at a temperature; (b) introducing a gas phase mixture comprising a halide-containing species and an alcohol vapor selected from a group consisting of ethanol, 1-propanol, and an aliphatic alcohol having four carbon groups into the process chamber, the gas phase mixture having a volumetric ratio of the halide-containing species to the alcohol vapor of approximately 2 or less; and (c) etching the sacrificial oxide with the gas phase mixture. In another aspect, the invention is a system for carrying out the method.

REFERENCES:
patent: 6666979 (2003-12-01), Chinn et al.
patent: 6916728 (2005-07-01), Gogoi et al.

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