Selective etching method

Details Selective etching method Selective etching method

2007-07-24

2007-07-24

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S024000, C216S041000, C216S046000, C216S049000, C216S051000, C216S056000, C216S057000, C216S062000, C216S067000, C216S068000, C216S072000, C216S079000, C216S087000, C216S099000, C438S022000, C438S048000, C438S704000, C438S942000

Reexamination Certificate

active

10839990

ABSTRACT:
A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.

REFERENCES:
patent: 3721592 (1973-03-01), De Werdt
patent: 5417801 (1995-05-01), Bol
patent: 6199874 (2001-03-01), Galvin et al.
patent: 6689282 (2004-02-01), Wilson
patent: 6827869 (2004-12-01), Podlesnik et al.
patent: 6949396 (2005-09-01), Hsieh et al.
patent: 2003/0027370 (2003-02-01), Helin

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