Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-06
2005-09-06
Smith, Brad (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000, C438S642000, C438S597000
Reexamination Certificate
active
06939801
ABSTRACT:
A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.
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Chen Ling
Chung Hua
Ku Vincent W.
Yang Michael X.
Yao Gongda
Applied Materials Inc.
Moser Patterson & Sheridan LLP
Smith Brad
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