Sealing pores of low-k dielectrics using C x H y

Details Sealing pores of low-k dielectrics using C x H y Sealing pores of low-k dielectrics using C x H y

2006-11-14

2006-11-14

Everhart, Caridad M. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C257SE21584, C257SE21576

Reexamination Certificate

active

07135402

ABSTRACT:
A semiconductor method of manufacturing involving porous and/or carbon containing, low-k dielectrics is provided. The method includes forming a hydrocarbon of the general composition CxHyon the surface of the low-k dielectric. The hydrocarbon layer includes depositing a precursor material, preferably C2H4or (CH3)2CHC6H6CH3. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing carbon depletion damage caused by plasma processing or etching. Surface dielectric pores damaged by plasma processing are also repaired by sealing them with the CxHylayer. Embodiments include semiconductor devices, such as devices having damascene interconnect structures, manufacturing using methods provided.

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