Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-09-19
2006-09-19
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S702000, C438S703000
Reexamination Certificate
active
07109119
ABSTRACT:
An improved method of patterning photoresist is described that is resistant to poisoning from nearby nitrogen containing layers. An inert resin is used to fill a via in a damascene stack. Then a second stack comprised of a barrier layer, a BARC, and a photoresist are formed on the damascene stack. The barrier layer is preferably an i-line or Deep UV photoresist comprising a polymer with hydroxy groups that can attract nitrogen containing compounds and prevent them from diffusing into the photoresist and causing scum during the patterning step. The photoresist pattern is etch transferred through underlying layers to form a trench in the damascene stack. Optionally, the resin is replaced by the barrier layer which fills the via and forms a planar layer on the damascene stack. The barrier layer is independent of exposure wavelength and can be readily implemented into manufacturing and is extendable to future technologies.
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Bao Tien-I
Jang Syun-Ming
Chen Kin-Chan
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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