Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-05
2009-08-04
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21010, C257SE21017, C361S320000
Reexamination Certificate
active
07569452
ABSTRACT:
A filter capacitor comprising a pre-sintered substrate supporting alternating active and ground electrode layers segregated by a dielectric layer is described. The substrate is of a ceramic material that maintains its shape and structure dimensions even after undergoing numerous sintering steps. Consequently, relatively thin active and ground electrode layers along with the intermediate dielectric layer can be laid down or deposited by a screen-printing technique. Using a relatively thin over-glaze in comparison to a thick upper dielectric layer finishes the capacitor. Consequently, a significant amount of space is saved in comparison to a comparably rated capacitor or, a capacitor of a higher rating can be provided in the same size as a conventional prior art capacitor. The pre-sintered ceramic substrate is used instead of conventional tape cast technology for the base dielectric.
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Billings Kenneth
Frysz Christine
Fu Richard
Zhu Mingguang
Everhart Caridad M
Greatbatch Ltd.
Scalise Michael F.
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