Scratch reduction for chemical mechanical polishing

Details Scratch reduction for chemical mechanical polishing Scratch reduction for chemical mechanical polishing

2007-11-20

2007-11-20

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000

Reexamination Certificate

active

11082517

ABSTRACT:
A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish pad, interrupting the first CMP process, cleaning the semiconductor device and the first polish pad, and performing a second CMP process for removing a second portion of the oxide surface.

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