Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-21
2011-06-21
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21199, C257SE21584, C438S630000, C438S643000, C438S664000, C438S687000
Reexamination Certificate
active
07964496
ABSTRACT:
A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring. The lining barrier layer may comprise same materials as the barrier layer, and the lining barrier layer may be recessed before forming the barrier layer and may contain a metal that can be silicided.
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Bao Tien-I
Chen Hai-Ching
Yu Chen-Hua
Sarkar Asok K
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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