Scanning laser thermal annealing

Details Scanning laser thermal annealing Scanning laser thermal annealing

2008-04-01

2008-04-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S795000, C257S021000

Reexamination Certificate

active

10021782

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, implanting dopants into the substrate and activating the dopants using laser thermal annealing. During annealing, the laser and substrate are moved relative to one another, and the movement of the laser and the substrate relative to one another does not pause between and during activating one portion of the source/drain regions and activating another portion of the source/drain regions. Each pulse from the laser can respectively irradiate different portions of the source/drain regions, and a spot area of the laser is less than 50 millimeter2.

REFERENCES:
patent: 6242292 (2001-06-01), Yamazaki et al.
patent: 6248606 (2001-06-01), Ino et al.
patent: 6303446 (2001-10-01), Weiner et al.

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