Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-06-30
2000-08-01
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438301, 438586, H01L 218238
Patent
active
060965908
ABSTRACT:
A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned. The invention overcomes the problem of self-aligned high resistance source/drain contacts and a high resistance gate electrode for submicron FET devices which increase as devices are scaled to smaller dimensions.
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Chan Kevin Kok
Chu Jack Oon
Ismail Khalid EzzEldin
Rishton Stephen Anthony
Saenger Katherine Lynn
Chaudhuri Olik
International Business Machines - Corporation
Trepp Robert M.
Wille Douglas A.
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