ROM embedded DRAM with dielectric removal/short

Details ROM embedded DRAM with dielectric removal/short ROM embedded DRAM with dielectric removal/short

2005-02-08

2005-02-08

Lebentritt, Michael S. (Department: 2824)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S542000, C438S491000, C438S488000

Reexamination Certificate

active

06852611

ABSTRACT:
A ROM embedded DRAM allows hard programming of ROM cells by shorting DRAM capacitor plates during fabrication. In one embodiment, the intermediate dielectric layer is removed and the plates are shorted with a conductor. In another embodiment, an upper conductor and dielectric are removed and a conductor is fabricated in contact with the DRAM storage plate. The memory allows ROM cells to be hard programmed to different data states, such as Vcc and Vss.

REFERENCES:
patent: 5995409 (1999-11-01), Holland
patent: 6134137 (2000-10-01), Kurth et al.
patent: 6140172 (2000-10-01), Parekh
patent: 6154864 (2000-11-01), Merritt
patent: 6243285 (2001-06-01), Kurth et al.
patent: 6410385 (2002-06-01), Kurth et al.

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