Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-02-07
2006-02-07
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S094000
Reexamination Certificate
active
06996021
ABSTRACT:
A ROM embedded DRAM that provides ROM cells that can be programmed to a single state. Bias techniques are used to read un-programmed ROM cells accurately. Sense amplifier circuitry can be offset in one embodiment to default to the un-programmed state. In another embodiment, bias circuitry is coupled to bit lines to favor the un-programmed state. Further, a differential pre-charge operation can also be used in another embodiment. The ROM embedded DRAM allows for simplifier fabrication and programming of the ROM cells, while providing accurate dual state functionality.
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Derner Scott
Kurth Casey
Wald Phillip G.
Leffert Jay & Polglaze P.A.
Phung Anh
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