Robust top-down silicon nanowire structure using a conformal...

Details Robust top-down silicon nanowire structure using a conformal... Robust top-down silicon nanowire structure using a conformal...

2009-05-20

2011-12-20

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S154000, C438S199000, C438S243000, C438S283000, C438S610000, C438S622000, C438S666000, C257S315000, C257S327000, C257S344000, C257S349000, C257SE21415

Reexamination Certificate

active

08080456

ABSTRACT:
In one exemplary embodiment, a method for fabricating a nanowire product comprising: providing a wafer having a buried oxide (BOX) upper layer in which a well is formed, the wafer further having a nanowire having ends resting on the BOX layer such that the nanowire forms a beam spanning said well; and forming a mask coating on an upper surface of the BOX layer leaving an uncoated window over a center part of said beam over said well and also forming a mask coating around beam intermediate ends between each end of a beam center part and a side wall of said well. In another exemplary embodiment, a nanowire product comprising: a wafer having a buried oxide (BOX) upper layer in which a well having side walls is formed; a nanowire having ends resting on the BOX layer so as to form a beam spanning said well and said side walls; and a hard mask coating on an upper surface of said BOX layer and around intermediate ends of said beam between each side wall of said well and ends of a center part of said beam leaving an uncoated window over a beam center part through which oxidation of said beam center part can take place.

REFERENCES:
patent: 6046408 (2000-04-01), Forrest
patent: 6175659 (2001-01-01), Huang
patent: 7217978 (2007-05-01), Joshi et al.
patent: 7274072 (2007-09-01), Chang et al.
patent: 7601570 (2009-10-01), Damlencourt
patent: 2005/0285149 (2005-12-01), Chang
patent: 2006/0281321 (2006-12-01), Conley et al.
patent: 2007/0187731 (2007-08-01), Chang
patent: 2007/0242507 (2007-10-01), Bernstein et al.
patent: 2007/0281156 (2007-12-01), Lieber et al.
patent: 2008/0008844 (2008-01-01), Bettge et al.
patent: 2008/0014689 (2008-01-01), Cleavelin et al.
patent: 2008/0041814 (2008-02-01), Romano et al.
patent: WO-2008/018834 (2008-02-01), None
patent: WO-2009/072984 (2009-06-01), None
Kedzierski, Jakub et al., “Novel method for silicon quantum wire transistor fabrication”, J. Vac. Sci. Technol. B17(6), Nov./Dec. 1999, pp. 3244-3247.

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