Robust interconnect structure

Details Robust interconnect structure Robust interconnect structure

1999-05-19

2000-10-17

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438628, 438637, 257762, 257751, 257750, 156664, H01L 214763

Patent

active

061331368

ABSTRACT:
A structure comprising a layer of copper, a barrier layer, a layer of AlCu, and a pad-limiting layer, wherein the layer of AlCu and barrier layer are interposed between the layer of copper and pad-limiting layer.

REFERENCES:
patent: 4434434 (1984-02-01), Bhattacharya et al.
patent: 5268072 (1993-12-01), Agarwala et al.
patent: 5629564 (1997-05-01), Nye, III et al.
patent: 5785236 (1998-07-01), Cheung et al.
patent: 5795819 (1998-08-01), Motsiff et al.
Dielectric/Metalization Joint PTAB, Sematech, Mar. 18-19, 1999, Orlando, FL .

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