RF plasma reactor with hybrid conductor and multi-radius dome ce

Details RF plasma reactor with hybrid conductor and multi-radius dome ce RF plasma reactor with hybrid conductor and multi-radius dome ce

1995-02-15

1998-05-19

Tsai, Jey

Coating apparatus

Gas or vapor deposition

With treating means

118723IR, C23C 1600

Patent

active

057530440

ABSTRACT:
An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.

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